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Research Article

Design & Power Analysis of 8T SRAM Cell

Open Access Peer Reviewed

Authors

  • E. Bharat Babu1
  • S. Raj Ganesh2
  • S. Arun3
  • M. Suseel Krishna4

1234Electronics & Communication Engineering, B.V. Raju Institute of Technology, Telangana, India.

Article Information

DOI
No DOI
Published Online
May-June 2022
Pages
623-627
Article Type
Research Article
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No DOI available for cross-reference

Abstract

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Abstract: This paper proposed the SRAM Architecture design using 8 Transistors to reduce the power leakages and improves the read & write delays. In the design the SRAM cell uses a charge sharing technique between the transistors to make SRAM more rigid against noises that occur due to low power supplies. Apart from noise reduction the read discharge power is reused. The circuit is also balanced with the same number of PMOS & NMOS, in order to achieve the maximum stability of SRAM. The comparison between standard 6T, 8T and proposed 8T with charges haring is made .Its hows that less power is consumed by 8T with charges haring than others.

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