Modeling and investigation of SET Inverter Circuit

DOI

No DOI

Published In

Volume 2, Issue 3 (2021)

Published Online

May-June 2021

Pages

10-11

Article Type

Research Article

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Abstract: This paper presents an analytical model Inverter based on the theory of single electron transistor (SET).The proposed arrangement is no doubt versatile so much that it might be used for single gate, multi-gate, symmetric, a symmetric devices and most importantly it can in like manner consider the effect of establishment charge. It can also be used for large voltage range of drain-source voltage autonomous of the tendency circumstances. The proposed design has been emulated with Flavor and the qualities produced by the proposed plan have been affirmed against Monte Carlo simulator SIMON.