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Modeling and investigation of SET Inverter Circuit
¹² Department of EEE, RV College of Engineering, VTU University, Karnataka, India.
Published Online: May-June 2021
Pages: 10-11
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Abstract
View PDFAbstract: This paper presents an analytical model Inverter based on the theory of single electron transistor (SET).The proposed arrangement is no doubt versatile so much that it might be used for single gate, multi-gate, symmetric, a symmetric devices and most importantly it can in like manner consider the effect of establishment charge. It can also be used for large voltage range of drain-source voltage autonomous of the tendency circumstances. The proposed design has been emulated with Flavor and the qualities produced by the proposed plan have been affirmed against Monte Carlo simulator SIMON.
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